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| UTC 2SB766A PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY OUTPUT AMPLIFICATION FEATURES *Large collector power dissipation Pc. *Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current Ic -1 A Peak Collector Current Icp -1.5 A Collector Power Dissipation Pc* 1 W Junction Temperature Tj 150 C Storage Temperature TSTG -55 ~ +150 C *Printed circuit board :Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Cut-Off Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Output Capacitance SYMBOL VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob TEST CONDITIONS Ic= -10A ,IE=0 Ic= -2mA ,IB= 0 IE= -10A, IC=0 VCB= -20V,IE=0 VCE= -10V,Ic= -500mA * VCE= -5V,Ic= -1A * Ic = -500mA,IB =-50mA* Ic = -500mA,IB =-50mA* VCB= -10V, IE= 50 mA, f=200MHz VCB= -10V, IE= 0, f=1MHz MIN -60 -50 -5 85 50 TYP MAX UNIT V V V A -0.1 340 -0.2 -0.85 200 20 -0.4 -1.2 30 V V MHz pF *Pulse measurement CLASSIFICATION OF hFE1 RANK RANGE Q 85-170 R 120-240 S 170-340 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R208-028,A UTC 2SB766A Pc-Ta 1.4 Collector Power Dissipation Pc(W ) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 PNP EPITAXIAL SILICON TRANSISTOR IC-VCE TA=25 -9m A -8m A -7m A -6m A IB=-10m A ELECTRICAL CHARACTERISTICS CURVES -1.50 -1.25 Collector Current Ic (A) -1.00 -0.75 -0.50 -0.25 100 120 140 160 0 0 -2 -4 -6 -8 Printed circuit board:Copper foil area of 1cm 2 or m ore,and the board thickness of 1.7m m for the collector portion. I(tot) mA I(tot) mA -5m A - 4m A -3m A -2m A -1m A -10 Ambient temperature Ta () VCE(sat)-Ic Collector to Emitter Saturation Voltage VCE(sat) (V) -100 -30 -10 -3 -1 -0.3 -0.1 TA=-25 -0.1 -0.3 hFE-Ic 600 Foward Current Transter Ration hFE VCE=-10V Transition Frequency fT(MHz) 500 400 TA=75 300 TA=25 200 100 TA=-25 200 180 160 140 120 100 80 60 40 20 0 1 -1 -3 -10 T A=75 TA=25 Base to Emitter Saturation Voltage VBE(sat) (V) IC/IB=10 -100 -30 -10 -3 -1 Collector to Emitter Voltage VCE(V) VBE(sat)-Ic IC/IB=10 TA=-25 -0.3 -0.1 TA=25 TA=75 -0.03 -0.01 -0.01 -0.03 -0.03 -0.01 -0.01 -0.03 -0.1 -0.3 fT-IE -1 -3 -10 Collector Current Ic(A) Collector Current Ic(A) VCB=-10V TA=25 0 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 3 10 30 100 Collector Current Ic(A) Emitter Current IE(mA) UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R208-028,A UTC 2SB766A 50 Collector O utput Capacitance Cob(pF) 45 40 35 30 25 20 15 10 5 0 -1 -3 -10 PNP EPITAXIAL SILICON TRANSISTOR Cob-VCB IE=0 f=1MHz Collector Current Ic(A) TA=25 Area of safe operation (ASO ) -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.003 -0.001 -1 -3 -0.1 -0.3 -0.01 -0.03 Collector to Emitter Voltage V CE(V ) t=1s Icp Ic Single Pulse TA=25 t=10ms -30 -100 -10 Collector to Base Voltage VCB(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R208-028,A |
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